Product Datasheet Search Results:
4 Pages, 53 KB, Original- FHX35X
- Sumitomo Electric Industries, Ltd.
- KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
4 Pages, 76 KB, Original- FHX35X/002
- Sumitomo Electric Industries, Ltd.
- Si, N-CHANNEL, RF SMALL SIGNAL, JFET
4 Pages, 76 KB, Original- FHX35X002
- Eudyna Devices, Inc.
- TRANS JFET 6V 4LG
4 Pages, 58 KB, Original- FHX35X
- Fujitsu Limited
- KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
4 Pages, 154 KB, Original- FHX35X/002
- Fujitsu Limited
- Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
4 Pages, 154 KB, Original- FHX35X/002-E1
- Fujitsu
- FET: P Channel: ID 0.085 A
Product Details Search Results:
Eudyna.com/FHX35X
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Style":"UNCASED CHIP","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"8.5 dB","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"4 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Mfr Package Description":...
1376 Bytes - 15:00:51, 13 November 2024
Eudyna.com/FHX35X/002
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"DIE","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2900 W","Package Style":"UNCASED CHIP","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"UPPER","Transistor Type":"RF SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE",...
1310 Bytes - 15:00:51, 13 November 2024
Fujitsu.com/FHX35X
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"DIE-4","Terminal Form":"NO LEAD","Operating Mode":"DEPLETION","Package Style":"UNCASED CHIP","Transistor Application":"AMPLIFIER","Power Gain-Min (Gp)":"8.5 dB","Highest Frequency Band":"KU BAND","Number of Elements":"1","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"HIGH ELECTRON MOBILITY","Terminal Position":"UPPER","Transistor Type":"RF SMALL SIGNAL","Package Shape":"RECTANGU...
1288 Bytes - 15:00:51, 13 November 2024
Fujitsu.com/FHX35X/002
{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Number of Elements":"1","Mfr Package Description":"DIE","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2900 W","Package Style":"UNCASED CHIP","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Transistor Element Material":"SILICON","FET Technology":"HIGH ELECTRON MOBILITY","Terminal Position":"UPPER","Transistor Type":"RF SMALL SIGNAL","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNSPECIFIED"...
1261 Bytes - 15:00:51, 13 November 2024
