FHX35X
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET

From Fujitsu Limited

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min4 V
FET TechnologyHIGH ELECTRON MOBILITY
Highest Frequency BandKU BAND
Mfr Package DescriptionDIE-4
Number of Elements1
Number of Terminals4
Operating ModeDEPLETION
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleUNCASED CHIP
Power Gain-Min (Gp)8.5 dB
Surface MountYes
Terminal FormNO LEAD
Terminal PositionUPPER
Transistor ApplicationAMPLIFIER
Transistor Element MaterialGALLIUM ARSENIDE
Transistor TypeRF SMALL SIGNAL

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