FHX35X KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
From Fujitsu Limited
Status | ACTIVE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 4 V |
FET Technology | HIGH ELECTRON MOBILITY |
Highest Frequency Band | KU BAND |
Mfr Package Description | DIE-4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | DEPLETION |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | UNCASED CHIP |
Power Gain-Min (Gp) | 8.5 dB |
Surface Mount | Yes |
Terminal Form | NO LEAD |
Terminal Position | UPPER |
Transistor Application | AMPLIFIER |
Transistor Element Material | GALLIUM ARSENIDE |
Transistor Type | RF SMALL SIGNAL |