Did you mean: FHX35X
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Eudyna.com/FHX35X
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Style":"UNCASED CHIP","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"8.5 dB","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"4 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Mfr Package Description":...
1376 Bytes - 15:15:12, 14 November 2024
Eudyna.com/FHX35X/002
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"DIE","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2900 W","Package Style":"UNCASED CHIP","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"UPPER","Transistor Type":"RF SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE",...
1310 Bytes - 15:15:12, 14 November 2024
Fujitsu.com/FHX35X
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"DIE-4","Terminal Form":"NO LEAD","Operating Mode":"DEPLETION","Package Style":"UNCASED CHIP","Transistor Application":"AMPLIFIER","Power Gain-Min (Gp)":"8.5 dB","Highest Frequency Band":"KU BAND","Number of Elements":"1","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"HIGH ELECTRON MOBILITY","Terminal Position":"UPPER","Transistor Type":"RF SMALL SIGNAL","Package Shape":"RECTANGU...
1288 Bytes - 15:15:12, 14 November 2024
Fujitsu.com/FHX35X/002
{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Number of Elements":"1","Mfr Package Description":"DIE","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2900 W","Package Style":"UNCASED CHIP","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Transistor Element Material":"SILICON","FET Technology":"HIGH ELECTRON MOBILITY","Terminal Position":"UPPER","Transistor Type":"RF SMALL SIGNAL","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNSPECIFIED"...
1261 Bytes - 15:15:12, 14 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| CDPX-X-E1-W-7.pdf | 1.34 | 1 | Request | |
| CDPX-X-E1-W-15.pdf | 1.34 | 1 | Request | |
| CDPX-X-E1-W-10.pdf | 1.34 | 1 | Request | |
| SX-E150Q.pdf | 2.18 | 1 | Request | |
| SX-E153Q.pdf | 1.41 | 1 | Request |
