FHX35X/002 Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
From Fujitsu Semiconductor
Status | TRANSFERRED |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 6 V |
FET Technology | HIGH ELECTRON MOBILITY |
Mfr Package Description | DIE |
Number of Elements | 1 |
Operating Mode | DEPLETION |
Package Body Material | UNSPECIFIED |
Package Shape | UNSPECIFIED |
Package Style | UNCASED CHIP |
Power Dissipation Ambient-Max | 0.2900 W |
Surface Mount | Yes |
Terminal Form | NO LEAD |
Terminal Position | UPPER |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Transistor Type | RF SMALL SIGNAL |