Did you mean: FHX35X
Product Datasheet Search Results:
4 Pages, 76 KB, Original- FHX35X002
- Eudyna Devices, Inc.
- TRANS JFET 6V 4LG
Product Details Search Results:
Eudyna.com/FHX35X
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Style":"UNCASED CHIP","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"8.5 dB","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"4 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Mfr Package Description":...
1376 Bytes - 15:13:01, 14 November 2024
Eudyna.com/FHX35X/002
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"DIE","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2900 W","Package Style":"UNCASED CHIP","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"UPPER","Transistor Type":"RF SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE",...
1310 Bytes - 15:13:01, 14 November 2024
Fujitsu.com/FHX35X
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"DIE-4","Terminal Form":"NO LEAD","Operating Mode":"DEPLETION","Package Style":"UNCASED CHIP","Transistor Application":"AMPLIFIER","Power Gain-Min (Gp)":"8.5 dB","Highest Frequency Band":"KU BAND","Number of Elements":"1","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"HIGH ELECTRON MOBILITY","Terminal Position":"UPPER","Transistor Type":"RF SMALL SIGNAL","Package Shape":"RECTANGU...
1288 Bytes - 15:13:01, 14 November 2024
Fujitsu.com/FHX35X/002
{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Number of Elements":"1","Mfr Package Description":"DIE","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2900 W","Package Style":"UNCASED CHIP","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Transistor Element Material":"SILICON","FET Technology":"HIGH ELECTRON MOBILITY","Terminal Position":"UPPER","Transistor Type":"RF SMALL SIGNAL","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNSPECIFIED"...
1261 Bytes - 15:13:01, 14 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| US2:TPS4EL115X002.pdf | 4.21 | 1 | Request | |
| US2:TPS3A0125X002.pdf | 0.33 | 1 | Request | |
| US2:TPS3B0115X002.pdf | 0.33 | 1 | Request | |
| US2:TPS4B0115X002.pdf | 4.21 | 1 | Request | |
| US2:TPS3C0115X002.pdf | 0.33 | 1 | Request | |
| US2:TPS3E0115X002.pdf | 0.33 | 1 | Request | |
| US2:TPS3C0125X002.pdf | 0.33 | 1 | Request | |
| US2:TPS3EL115X002.pdf | 0.38 | 1 | Request | |
| US2:TPS4B0125X002.pdf | 4.21 | 1 | Request | |
| US2:TPS4F0115X002.pdf | 4.21 | 1 | Request | |
| US2:TPS4A0125X002.pdf | 4.21 | 1 | Request | |
| US2:TPS4E0115X002.pdf | 4.21 | 1 | Request |
