Product Datasheet Search Results:

BSC018NE2LS.pdf12 Pages, 1546 KB, Original
BSC018NE2LS
Infineon Technologies
MOSFET N-CH 25V 100A TDSON-8 - BSC018NE2LS
BSC018NE2LSATMA1.pdf10 Pages, 777 KB, Original
BSC018NE2LSATMA1
Infineon Technologies
Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP
BSC018NE2LS=FS1.pdf10 Pages, 777 KB, Original
BSC018NE2LS=FS1
Infineon Technologies
Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP
BSC018NE2LSI.pdf12 Pages, 1555 KB, Original
BSC018NE2LSI
Infineon Technologies
MOSFET N-CH 25V 100A TDSON-8 - BSC018NE2LSI
BSC018NE2LSIATMA1.pdf10 Pages, 638 KB, Original
BSC018NE2LSIATMA1
Infineon Technologies
Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP
BSC018NE2LSIXT.pdf1 Pages, 309 KB, Original
BSC018NE2LSIXT
Infineon Technologies
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018NE2LS=MI1.pdf10 Pages, 777 KB, Original
BSC018NE2LS=MI1
Infineon Technologies
Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP

Product Details Search Results:

Infineon.com/BSC018NE2LS
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"8-PowerTDFN","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2800pF @ 12V","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-TDSON-8","Datasheets":"BSC018NE2LS","Rds On (Max) @ Id, Vgs":"1.8 mOhm @ 30A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"69W","Package / Case":"8-PowerTDFN","Moun...
1685 Bytes - 19:02:35, 05 November 2024
Infineon.com/BSC018NE2LSATMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"29(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"25(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"TDSON EP","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...
1571 Bytes - 19:02:35, 05 November 2024
Infineon.com/BSC018NE2LS=FS1
{"Category":"MOSFET","Maximum Drain Source Voltage":"25 V","Typical Rise Time":"4.4 ns","Typical Turn-Off Delay Time":"26 ns","Description":"Value","Maximum Continuous Drain Current":"29 A","Package":"8TDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"20 V","Typical Turn-On Delay Time":"5.5 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1.8@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"3.6 ns"}...
1445 Bytes - 19:02:35, 05 November 2024
Infineon.com/BSC018NE2LSI
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"8-PowerTDFN","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2500pF @ 12V","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-TDSON-8","Datasheets":"BSC018NE2LSI","Rds On (Max) @ Id, Vgs":"1.8 mOhm @ 30A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Pow...
1864 Bytes - 19:02:35, 05 November 2024
Infineon.com/BSC018NE2LSIATMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"29(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"25(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TDSON EP","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...
1604 Bytes - 19:02:35, 05 November 2024
Infineon.com/BSC018NE2LSIXT
{"Factory Pack Quantity":"5000","Vds - Drain-Source Breakdown Voltage":"25 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"1.2 V to 2 V","Qg - Gate Charge":"36 nC","Package / Case":"TDSON-8","Part # Aliases":"BSC018NE2LSIATMA1 SP000906030","Fall Time":"3.6 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Tradename":"OptiMOS","Configuration":"Single Quad Drain Triple Source","Maximum Operating Tempe...
2013 Bytes - 19:02:35, 05 November 2024
Infineon.com/BSC018NE2LS=MI1
{"Category":"MOSFET","Maximum Drain Source Voltage":"25 V","Typical Rise Time":"4.4 ns","Typical Turn-Off Delay Time":"26 ns","Description":"Value","Maximum Continuous Drain Current":"29 A","Package":"8TDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"20 V","Typical Turn-On Delay Time":"5.5 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1.8@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"3.6 ns"}...
1444 Bytes - 19:02:35, 05 November 2024

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