BSC018NE2LSIXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
From Infineon Technologies
| Brand | Infineon Technologies |
| Configuration | Single Quad Drain Triple Source |
| Factory Pack Quantity | 5000 |
| Fall Time | 3.6 ns |
| Forward Transconductance - Min | 130 S |
| Id - Continuous Drain Current | 100 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC018NE2LSIATMA1 SP000906030 |
| Pd - Power Dissipation | 69 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 36 nC |
| Rds On - Drain-Source Resistance | 1.8 mOhms |
| Rise Time | 4.8 ns |
| RoHS | Details |
| Series | OptiMOS |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 24 ns |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V to 2 V |
