BSC018NE2LSI MOSFET N-CH 25V 29A TDSON-8
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 100A (Tc) |
| Datasheets | BSC018NE2LSI |
| Drain to Source Voltage (Vdss) | 25V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2500pF @ 12V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | BSC018NE2LSIDKR |
| Package / Case | 8-PowerTDFN |
| Packaging | Digi-Reel® |
| Power - Max | 69W |
| Product Photos | 8-PowerTDFN |
| Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 30A, 10V |
| Series | OptiMOS™ |
| Standard Package | 1 |
| Supplier Device Package | PG-TDSON-8 |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
