Product Datasheet Search Results:
- BSC018NE2LSIXT
- Infineon Technologies
- MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
Product Details Search Results:
Infineon.com/BSC018NE2LSIXT
{"Factory Pack Quantity":"5000","Vds - Drain-Source Breakdown Voltage":"25 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"1.2 V to 2 V","Qg - Gate Charge":"36 nC","Package / Case":"TDSON-8","Part # Aliases":"BSC018NE2LSIATMA1 SP000906030","Fall Time":"3.6 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Tradename":"OptiMOS","Configuration":"Single Quad Drain Triple Source","Maximum Operating Tempe...
2013 Bytes - 21:40:20, 05 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
BSC018NE2LSI.pdf | 1.53 | 1 | Request |