Product Datasheet Search Results:
- 2SB637K
- Hitachi Semiconductor
- Silicon PNP Epitaxial Transistor, Low Freq. Amp
Product Details Search Results:
Hitachi.co.jp/2SB637KC
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"300m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"12","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"50","Package":"TO-92","h(FE) Min. Static Current Gain":"160","V(BR)CBO (V)":"50","Military":"N","C(obo) (Max) (F)":"1.8p"}...
862 Bytes - 21:32:36, 17 November 2024
Hitachi.co.jp/2SB637KD
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"300m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"12","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"50","Package":"TO-92","h(FE) Min. Static Current Gain":"250","V(BR)CBO (V)":"50","Military":"N","C(obo) (Max) (F)":"1.8p"}...
863 Bytes - 21:32:36, 17 November 2024
Hitachi.co.jp/2SB637KE
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"300m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"12","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"50","Package":"TO-92","h(FE) Min. Static Current Gain":"400","V(BR)CBO (V)":"50","Military":"N","C(obo) (Max) (F)":"1.8p"}...
862 Bytes - 21:32:36, 17 November 2024
Hitachi.co.jp/2SB638H
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"5.0","Absolute Max. Power Diss. (W)":"80","I(CBO) Max. (A)":"100u","I(C) Abs.(A) Collector Current":"10","Semiconductor Material":"Silicon","h(FE) Max. Current gain.":"20k","@V(CE) (V) (Test Condition)":"3.0","V(BR)CEO (V)":"100","Package":"TO-3","h(FE) Min. Static Current Gain":"1.0k","V(BR)CBO (V)":"100","Military":"N"}...
867 Bytes - 21:32:36, 17 November 2024
Hitachi.co.jp/2SB639H
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"5.0","Absolute Max. Power Diss. (W)":"100","I(CBO) Max. (A)":"100u","I(C) Abs.(A) Collector Current":"10","Semiconductor Material":"Silicon","h(FE) Max. Current gain.":"20k","@V(CE) (V) (Test Condition)":"3.0","V(BR)CEO (V)":"100","Package":"TO-3","h(FE) Min. Static Current Gain":"1.0k","V(BR)CBO (V)":"100","Military":"N"}...
868 Bytes - 21:32:36, 17 November 2024
Microelectr.com.hk/2SB637K
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"160","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"200 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND"...
1301 Bytes - 21:32:36, 17 November 2024
N_a/2SB63
{"Category":"Germanium Transistor, PNP Transistor, Transistor","Amps":"0.5A","MHz":"<1 MHz","Volts":"32V"}...
533 Bytes - 21:32:36, 17 November 2024
N_a/2SB630
{"Category":"PNP Transistor, Transistor","Amps":"2A","MHz":"4 MHz","Volts":"200V"}...
511 Bytes - 21:32:36, 17 November 2024
N_a/2SB631
{"Category":"PNP Transistor, Transistor","Amps":"1A","MHz":"110 MHz","Volts":"100V"}...
513 Bytes - 21:32:36, 17 November 2024
N_a/2SB631K
{"Category":"PNP Transistor, Transistor","Amps":"1A","MHz":"110 MHz","Volts":"120V"}...
516 Bytes - 21:32:36, 17 November 2024
N_a/2SB632
{"Category":"PNP Transistor, Transistor","Amps":"2A","MHz":"100 MHz","Volts":"25V"}...
512 Bytes - 21:32:36, 17 November 2024
N_a/2SB632K
{"Category":"PNP Transistor, Transistor","Amps":"2A","MHz":"100 MHz","Volts":"35V"}...
517 Bytes - 21:32:36, 17 November 2024
Documentation and Support
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1VCFTMCSB63D30L475.pdf | 0.07 | 1 | Request | |
END_OF_LIFE_INSTRUCTION_ESB63_XXN.pdf | 1.29 | 1 | Request | |
INSTALLATION_CONTACTORS_ESB63_40N_DC_B.pdf | 0.29 | 1 | Request |