Product Datasheet Search Results:

2SB637K.pdf2 Pages, 216 KB, Scan
2SB637K
Hitachi Semiconductor
Silicon PNP Epitaxial Transistor, Low Freq. Amp
2SB637K.pdf1 Pages, 66 KB, Scan
2SB637K
Micro Electronics Corporation
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SB637K.pdf1 Pages, 43 KB, Scan
2SB637K
N/a
Shortform Data and Cross References (Misc Datasheets)

Product Details Search Results:

Hitachi.co.jp/2SB637KC
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"300m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"12","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"50","Package":"TO-92","h(FE) Min. Static Current Gain":"160","V(BR)CBO (V)":"50","Military":"N","C(obo) (Max) (F)":"1.8p"}...
862 Bytes - 23:56:55, 17 November 2024
Hitachi.co.jp/2SB637KD
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"300m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"12","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"50","Package":"TO-92","h(FE) Min. Static Current Gain":"250","V(BR)CBO (V)":"50","Military":"N","C(obo) (Max) (F)":"1.8p"}...
863 Bytes - 23:56:55, 17 November 2024
Hitachi.co.jp/2SB637KE
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"300m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"12","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"50","Package":"TO-92","h(FE) Min. Static Current Gain":"400","V(BR)CBO (V)":"50","Military":"N","C(obo) (Max) (F)":"1.8p"}...
862 Bytes - 23:56:55, 17 November 2024
Microelectr.com.hk/2SB637K
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"160","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"200 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND"...
1301 Bytes - 23:56:55, 17 November 2024
Various/2SB637K
{"@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"300m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"12","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"50","Package":"TO-92","h(FE) Min. Static Current Gain":"160","V(BR)CBO (V)":"50","Military":"N","C(obo) (Max) (F)":"1.8p"}...
800 Bytes - 23:56:55, 17 November 2024

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