2SB638H
PNP Darlington Transistor

From Hitachi Semiconductor

StatusDiscontinued
@I(C) (A) (Test Condition)5.0
@V(CE) (V) (Test Condition)3.0
Absolute Max. Power Diss. (W)80
I(C) Abs.(A) Collector Current10
I(CBO) Max. (A)100u
MilitaryN
PackageTO-3
Semiconductor MaterialSilicon
V(BR)CBO (V)100
V(BR)CEO (V)100
h(FE) Max. Current gain.20k
h(FE) Min. Static Current Gain1.0k

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