Product Datasheet Search Results:
- 2SB632
- On Semiconductor L.l.c.
- 2000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126
- 2SB632D
- On Semiconductor L.l.c.
- 2000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126
Product Details Search Results:
N_a/2SB632
{"Category":"PNP Transistor, Transistor","Amps":"2A","MHz":"100 MHz","Volts":"25V"}...
512 Bytes - 23:29:51, 17 November 2024
N_a/2SB632K
{"Category":"PNP Transistor, Transistor","Amps":"2A","MHz":"100 MHz","Volts":"35V"}...
517 Bytes - 23:29:51, 17 November 2024
Onsemi.com/2SB632
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"25 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR...
1326 Bytes - 23:29:51, 17 November 2024
Onsemi.com/2SB632D
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"60","Collector-emitter Voltage-Max":"25 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR...
1334 Bytes - 23:29:51, 17 November 2024
Onsemi.com/2SB632E
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"25 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape":"RECTANGULA...
1334 Bytes - 23:29:51, 17 November 2024
Onsemi.com/2SB632F
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"160","Collector-emitter Voltage-Max":"25 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape":"RECTANGULA...
1335 Bytes - 23:29:51, 17 November 2024
Onsemi.com/2SB632K
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"35 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR...
1334 Bytes - 23:29:51, 17 November 2024
Onsemi.com/2SB632KD
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"60","Collector-emitter Voltage-Max":"35 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR...
1338 Bytes - 23:29:51, 17 November 2024
Onsemi.com/2SB632KE
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"35 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape":"RECTANGULA...
1341 Bytes - 23:29:51, 17 November 2024
Onsemi.com/2SB632KF
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"160","Collector-emitter Voltage-Max":"35 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape":"RECTANGULA...
1339 Bytes - 23:29:51, 17 November 2024
Documentation and Support
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YOKOGAWA_28A9B632.pdf | 1.85 | 1 | Request | |
MEFA_8FEB632A.pdf | 0.33 | 1 | Request | |
7BB632190.pdf | 0.04 | 1 | Request | |
686B632U01.pdf | 0.06 | 1 | Request | |
7BFVB6320.pdf | 0.21 | 1 | Request | |
3HAB6324_1.pdf | 0.09 | 1 | Request |