Product Datasheet Search Results:
9 Pages, 88 KB, Original- 2SK3147
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 88 KB, Original- 2SK3147(L)
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 53 KB, Original- 2SK3147L
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 88 KB, Original- 2SK3147L-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 88 KB, Original- 2SK3147(S)
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 53 KB, Original- 2SK3147S
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 88 KB, Original- 2SK3147STL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
1 Pages, 57 KB, Scan- 2SK3147
- Renesas Electronics
- 0.19 ohm, POWER, FET
12 Pages, 58 KB, Original- 2SK3147(L)
- Renesas Electronics
- 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
14 Pages, 75 KB, Original- 2SK3147L
- Renesas Electronics
- 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 139 KB, Original- 2SK3147-L(E)
- Renesas Technology
- Trans MOSFET N-CH 100V 5A 3-Pin(3+Tab) DPAK(L)-(2)
11 Pages, 234 KB, Original- 2SK3147L-E
- Renesas Electronics
- 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SK3147
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"DPAK-3","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Drain-source On Resistance-Max":"0.1900 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"3"}...
973 Bytes - 22:00:49, 27 November 2024
Renesas.com/2SK3147(L)
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"DPAK-3","Pulsed Drain Current-Max (IDM)":"20 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shap...
1404 Bytes - 22:00:49, 27 November 2024
Renesas.com/2SK3147L
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor ...
1424 Bytes - 22:00:49, 27 November 2024
Renesas.com/2SK3147-L(E)
{"Polarity":"N","Product Category":"MOSFET","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"5 A","Mounting":"Through Hole","Drain-Source On-Volt":"100 V","Power Dissipation":"20 W","Rad Hardened":"No","Package Type":"DPAK(L)-(2)","DELETED":"Compliant","Operating Temp Range":"-55C to 150C","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1","Manufacturer":"RENESAS TECHNOLOGY"}...
1358 Bytes - 22:00:49, 27 November 2024
Renesas.com/2SK3147L-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1481 Bytes - 22:00:49, 27 November 2024
Renesas.com/2SK3147(S)
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surfac...
1431 Bytes - 22:00:49, 27 November 2024
Renesas.com/2SK3147S
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor App...
1447 Bytes - 22:00:49, 27 November 2024
Renesas.com/2SK3147S-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...
1508 Bytes - 22:00:49, 27 November 2024
Renesas.com/2SK3147STL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...
1525 Bytes - 22:00:49, 27 November 2024
