Product Datasheet Search Results:

2SK3147(S).pdf9 Pages, 88 KB, Original
2SK3147(S)
Renesas Technology / Hitachi Semiconductor
Silicon N Channel MOS FET High Speed Power Switching
2SK3147(S).pdf12 Pages, 58 KB, Original
2SK3147(S)
Renesas Electronics
5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/2SK3147(S)
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surfac...
1431 Bytes - 00:58:43, 28 November 2024

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