Product Datasheet Search Results:
9 Pages, 53 KB, Original- 2SK3147S
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 88 KB, Original- 2SK3147STL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
14 Pages, 75 KB, Original- 2SK3147S
- Renesas Electronics
- 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
14 Pages, 75 KB, Original- 2SK3147S-E
- Renesas Electronics
- 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
11 Pages, 234 KB, Original- 2SK3147STL-E
- Renesas Electronics
- 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SK3147S
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor App...
1447 Bytes - 00:59:18, 28 November 2024
Renesas.com/2SK3147S-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...
1508 Bytes - 00:59:18, 28 November 2024
Renesas.com/2SK3147STL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...
1525 Bytes - 00:59:18, 28 November 2024
