Product Datasheet Search Results:
1 Pages, 33 KB, Original- MV1666
- Aeroflex / Metelics
- 330 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 74 KB, Scan- MV1666
- Api Electronics Group
- VHF-UHF BAND, 330 pF, 15 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
1 Pages, 74 KB, Scan- MV1666B
- Api Electronics Group
- VHF-UHF BAND, 330 pF, 15 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
1 Pages, 74 KB, Scan- MV1666C
- Api Electronics Group
- VHF-UHF BAND, 330 pF, 15 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
2 Pages, 88 KB, Scan- CV1666
- Crystalonics
- Voltage Variable Capacitance Diodes Data Book 1976
1 Pages, 42 KB, Scan- MV1666
- Crystalonics
- Voltage Variable Capacitance Diodes Data Book 1976
1 Pages, 33 KB, Original- MV1666
- Knox Semiconductor, Inc.
- ABRUPT VARACTOR DIODES
Product Details Search Results:
Aeroflex.com/MV1666
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Terminal Form":"WIRE","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"330 pF","Power Dissipation Limit-Max":"0.4750 W","Case Connection":"ISOLATED","Quality Factor-Min":"100","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape"...
1275 Bytes - 19:38:33, 24 November 2024
Aeroflex.com/V1666
{"Reverse Test Voltage":"10 V","Terminal Finish":"TIN LEAD","Diode Capacitance-Nom":"330 pF","Breakdown Voltage-Min":"15 V","Rep Pk Reverse Voltage-Max":"15 V","Operating Temperature-Max":"175 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Quality Factor-Min":"100","Package Shape":"ROUND","Status":"Discontinued","Package Style":"LONG FORM","Terminal Form":"WIRE","Sub Category":"Varactors","Configuration":"SINGLE","Reverse Current-Max":"1.00E-7 \u00b5A","Surface Mount":"NO","Case Connection":...
1497 Bytes - 19:38:33, 24 November 2024
Aeroflex.com/V1666CO
{"Reverse Test Voltage":"10 V","Diode Capacitance-Nom":"330 pF","Breakdown Voltage-Min":"15 V","Terminal Form":"WIRE","Operating Temperature-Max":"175 Cel","Qualification Status":"COMMERCIAL","Quality Factor-Min":"100","Package Shape":"ROUND","Status":"Discontinued","Package Style":"LONG FORM","Configuration":"SINGLE","Reverse Current-Max":"0.1000 \u00b5A","Surface Mount":"NO","Case Connection":"ISOLATED","Mfr Package Description":"DIE-1","Number of Terminals":"2","JESD-30 Code":"O-LALF-W2","Terminal Positi...
1357 Bytes - 19:38:33, 24 November 2024
Americanmicrosemi.com/V1666
{"Status":"Active","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
758 Bytes - 19:38:33, 24 November 2024
Apitech.com/MV1666
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"15 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.3","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"330 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":...
1391 Bytes - 19:38:33, 24 November 2024
Apitech.com/MV1666B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"15 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.3","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"330 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1392 Bytes - 19:38:33, 24 November 2024
Apitech.com/MV1666C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"15 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.3","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"330 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1394 Bytes - 19:38:33, 24 November 2024
Knoxsemiconductor.com/V1666
{"Status":"Discontinued","C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"330p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4","@V(Q min)(V) (Test Condition)":"4"}...
895 Bytes - 19:38:33, 24 November 2024
Various/CV1666
{"C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","Q Factor Min.":"100","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"20M","Ct{Cj} Nom. (F) Junction Cap.":"330p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
759 Bytes - 19:38:33, 24 November 2024
Various/MV1666B
{"C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"DO-14","P(D) Max.(W) Power Dissipation":"500m","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"330p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
838 Bytes - 19:38:33, 24 November 2024
Various/MV1666BCHIP
{"C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"Chip","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"330p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
817 Bytes - 19:38:33, 24 November 2024
Various/MV1666C
{"C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"DO-14","P(D) Max.(W) Power Dissipation":"500m","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"330p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
838 Bytes - 19:38:33, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| PV1661.pdf | 0.08 | 1 | Request |
