Product Datasheet Search Results:
1 Pages, 33 KB, Original- MV1666
- Aeroflex / Metelics
- 330 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 74 KB, Scan- MV1666
- Api Electronics Group
- VHF-UHF BAND, 330 pF, 15 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
1 Pages, 74 KB, Scan- MV1666B
- Api Electronics Group
- VHF-UHF BAND, 330 pF, 15 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
1 Pages, 74 KB, Scan- MV1666C
- Api Electronics Group
- VHF-UHF BAND, 330 pF, 15 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
1 Pages, 42 KB, Scan- MV1666
- Crystalonics
- Voltage Variable Capacitance Diodes Data Book 1976
1 Pages, 33 KB, Original- MV1666
- Knox Semiconductor, Inc.
- ABRUPT VARACTOR DIODES
2 Pages, 117 KB, Scan- MV1666
- Msi Electronics, Inc.
- Abrupt / Hyperabrupt Glass Packaged Tuning Diodes
2 Pages, 117 KB, Scan- MV1666B
- Msi Electronics, Inc.
- 15V Vrrm, 330pF Capacitance Varactor Diode
2 Pages, 117 KB, Scan- MV1666BCHIP
- Msi Electronics, Inc.
- 15V Vrrm, 330pF Capacitance Varactor Diode
2 Pages, 117 KB, Scan- MV1666C
- Msi Electronics, Inc.
- 15V Vrrm, 330pF Capacitance Varactor Diode
2 Pages, 117 KB, Scan- MV1666CCHIP
- Msi Electronics, Inc.
- 15V Vrrm, 330pF Capacitance Varactor Diode
Product Details Search Results:
Aeroflex.com/MV1666
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Terminal Form":"WIRE","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"330 pF","Power Dissipation Limit-Max":"0.4750 W","Case Connection":"ISOLATED","Quality Factor-Min":"100","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape"...
1275 Bytes - 21:35:52, 24 November 2024
Apitech.com/MV1666
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"15 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.3","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"330 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":...
1391 Bytes - 21:35:52, 24 November 2024
Apitech.com/MV1666B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"15 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.3","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"330 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1392 Bytes - 21:35:52, 24 November 2024
Apitech.com/MV1666C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"15 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.3","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"330 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1394 Bytes - 21:35:52, 24 November 2024
Various/MV1666B
{"C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"DO-14","P(D) Max.(W) Power Dissipation":"500m","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"330p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
838 Bytes - 21:35:52, 24 November 2024
Various/MV1666BCHIP
{"C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"Chip","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"330p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
817 Bytes - 21:35:52, 24 November 2024
Various/MV1666C
{"C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"DO-14","P(D) Max.(W) Power Dissipation":"500m","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"330p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
838 Bytes - 21:35:52, 24 November 2024
Various/MV1666CCHIP
{"C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"Chip","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"330p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
816 Bytes - 21:35:52, 24 November 2024
Various/MV1666CHIP
{"C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"Chip","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"330p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
812 Bytes - 21:35:52, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| AMV160-40.pdf | 0.16 | 1 | Request | |
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| FMV16N50ES.pdf | 0.52 | 1 | Request | |
| FMV16N60ES.pdf | 0.57 | 1 | Request | |
| FMV16N50E.pdf | 0.41 | 1 | Request |
