Datasheet.Directory

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"15 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.3","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"330 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...

{"C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"DO-14","P(D) Max.(W) Power Dissipation":"500m","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"330p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...

{"C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"15","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"Chip","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"330p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...