Datasheet.Directory

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"UNCASED CHIP","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.3 ohm","Packag...

{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"35 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Tr...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"35 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"220 mOhm @ 5A, 5V","FET Feature":"Standard","Product Photos":"DPAK_369C","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"-","Standard Package":"10","Supplier Device Package":"DPAK","Other Names":"MTD10N10ELT4OSCT","Packaging":"Cut Tape (CT)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"MTD10N10EL","Power - Max":"1.75W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface...

{"Status":"ACTIVE","Negative Tolerance":"5 %","Mounting Feature":"THROUGH HOLE MOUNT","Mfr Package Description":"AXIAL LEADED","Operating Temperature-Min":"-55 Cel","Terminal Shape":"WIRE","Multilayer":"Yes","Operating Temperature-Max":"125 Cel","Temperature Coefficient":"30ppm/Cel","Capacitance":"1.00E-5 uF","Capacitor Type":"CERAMIC","Manufacturer Series":"AD10","Rated DC Voltage (URdc)":"50 V","Package Shape":"TUBULAR PACKAGE","Positive Tolerance":"5 %","Temperature Characteristics Code":"C0G"}...

{"Status":"ACTIVE","Negative Tolerance":"5 %","Mounting Feature":"THROUGH HOLE MOUNT","Mfr Package Description":"AXIAL LEADED","Operating Temperature-Min":"-55 Cel","Terminal Shape":"WIRE","Multilayer":"Yes","Operating Temperature-Max":"125 Cel","Temperature Coefficient":"30ppm/Cel","Capacitance":"1.00E-4 uF","Capacitor Type":"CERAMIC","Manufacturer Series":"AD10","Rated DC Voltage (URdc)":"50 V","Package Shape":"TUBULAR PACKAGE","Positive Tolerance":"5 %","Temperature Characteristics Code":"C0G"}...

{"Status":"ACTIVE","Negative Tolerance":"5 %","Mounting Feature":"THROUGH HOLE MOUNT","Mfr Package Description":"AXIAL LEADED","Operating Temperature-Min":"-55 Cel","Terminal Shape":"WIRE","Multilayer":"Yes","Operating Temperature-Max":"125 Cel","Temperature Coefficient":"30ppm/Cel","Capacitance":"1.00E-3 uF","Capacitor Type":"CERAMIC","Manufacturer Series":"AD10","Rated DC Voltage (URdc)":"50 V","Package Shape":"TUBULAR PACKAGE","Positive Tolerance":"5 %","Temperature Characteristics Code":"C0G"}...

{"C(iss) Max. (F)":"750p","Absolute Max. Power Diss. (W)":"50","g(fs) Max, (S) Trans. conduct,":"5.0","I(D) Abs. Max.(A) Drain Curr.":"7.0","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":".2","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"40","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"5.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-252","Military":"N","...

{"C(iss) Max. (F)":"750p","Absolute Max. Power Diss. (W)":"50","g(fs) Max, (S) Trans. conduct,":"5.0","I(D) Abs. Max.(A) Drain Curr.":"7.0","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":".2","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"40","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"5.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-251","Military":"N","...

{"C(iss) Max. (F)":"1.0n","Absolute Max. Power Diss. (W)":"50","g(fs) Max, (S) Trans. conduct,":"5.0","I(D) Abs. Max.(A) Drain Curr.":"7.0","@V(GS) (V) (Test Condition)":"5.0","r(DS)on Max. (Ohms)":".2","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"40","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"15","@I(D) (A) (Test Condition)":"5.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.5","V(GS)th Min. (V)":"1.0","Package":"TO-251","Military":"N",...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Number of Elements":"1","Mfr Package Description":"0.351 X 0.284 INCH, DIE","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"UNCASED CHIP","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain-source On Resistance-Max":"1.2 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGU...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Number of Elements":"1","Mfr Package Description":"0.350 X 0.282 INCH, DIE","Operating Mode":"ENHANCEMENT","Channel Type":"N-CHANNEL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1.2 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Type":"GENERAL PURPOSE POWER","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Application":"SWITCHING","DS Breakdown Voltage-Min":"...