IXTD10N100 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
From Microsemi Corp.
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 1000 V |
| Drain Current-Max (ID) | 10 A |
| Drain-source On Resistance-Max | 1.3 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | DIE |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | UNSPECIFIED |
| Package Shape | UNSPECIFIED |
| Package Style | UNCASED CHIP |
| Surface Mount | Yes |
| Terminal Finish | TIN LEAD |
| Terminal Form | NO LEAD |
| Terminal Position | UPPER |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
