Product Datasheet Search Results:
5 Pages, 38 KB, Original- SI2301BDS
- Vishay Presicion Group
- 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
5 Pages, 38 KB, Original- SI2301BDS-E3
- Vishay Presicion Group
- 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
3 Pages, 185 KB, Original- SI2301BDS SPICE DEVICE MODEL
- Vishay
- P-Channel 2.5-V (G-S) MOSFET
5 Pages, 57 KB, Original- SI2301BDS-T1
- Vishay Siliconix
- P-Channel 2.5-V (G-S) MOSFET
6 Pages, 72 KB, Original- SI2301BDST1
- Vishay
- MOSFET,P CHAN,2.5V,SOT23
9 Pages, 162 KB, Original- SI2301BDS-T1-E3
- Vishay [siliconix]
- MOSFET P-CH 20V 2.2A SOT23-3 - SI2301BDS-T1-E3
9 Pages, 162 KB, Original- SI2301BDS-T1-GE3
- Vishay [siliconix]
- MOSFET P-CH 20V 2.2A SOT23-3 - SI2301BDS-T1-GE3
Product Details Search Results:
Siliconix_vishay/SI2301BDS-T1-E3
{"Category":"Power MOSFET","Configuration":"Single","Mounting Type":"Surface Mount","Channel Mode":"Enhancement","Length":"3.04 mm","Channel Type":"P","Typical TurnOff Delay Time":"30 ns","Maximum Drain Source Resistance":"0.15 \u03a9","Package Type":"TO-236","Number of Elements per Chip":"1","Minimum Operating Temperature":"-55 \u00b0C","Forward Diode Voltage":"-1.2 V","Height":"1.02 mm","Maximum Operating Temperature":"+150 \u00b0C","Pin Count":"3"}...
1529 Bytes - 20:45:13, 05 November 2024
Vishay.com/SI2301BDS
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-236, 3 PIN","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2.2 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration"...
1375 Bytes - 20:45:13, 05 November 2024
Vishay.com/SI2301BDS-E3
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1470 Bytes - 20:45:13, 05 November 2024
Vishay.com/SI2301BDS-T1
739 Bytes - 20:45:13, 05 November 2024
Vishay.com/SI2301BDS-T1-BE3
708 Bytes - 20:45:13, 05 November 2024
Vishay.com/SI2301BDS-T1-E3
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"P-Channel Logic Level Gate FETs","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"950mV @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"375pF @ 6V","Series":"TrenchFET\u00ae","Standard Package":"1","Supplier Device Package":"SOT-23-3 (TO-236)","Datasheets":"SI2301BDS","Rds On (Max) @ Id, Vgs":"100 mOhm @ 2.8A, 4.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae...
1790 Bytes - 20:45:13, 05 November 2024
Vishay.com/SI2301BDS-T1-GE3
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"950mV @ 250\u00b5A","Series":"TrenchFET\u00ae","Standard Package":"3,000","Supplier Device Package":"SOT-23-3 (TO-236)","Datasheets":"SI2301BDS","Rds On (Max) @ Id, Vgs":"100 mOhm @ 2.8A, 4.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"700mW","Package / Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type":"Surfac...
1613 Bytes - 20:45:13, 05 November 2024
