SI2301BDS-T1-GE3 MOSFET P-CH 20V 2.2A SOT23-3
From Vishay Siliconix
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Datasheets | SI2301BDS |
| Drain to Source Voltage (Vdss) | 20V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 375pF @ 6V |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 700mW |
| Product Photos | SOT-23-3 |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.8A, 4.5V |
| Series | TrenchFET® |
| Standard Package | 3,000 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
