Product Datasheet Search Results:

IRF330E.pdf92 Pages, 2885 KB, Scan
IRF330E
International Rectifier
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF330EA.pdf92 Pages, 2885 KB, Scan
IRF330EA
International Rectifier
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF330EAPBF.pdf92 Pages, 2885 KB, Scan
IRF330EAPBF
International Rectifier
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF330EB.pdf92 Pages, 2885 KB, Scan
IRF330EB
International Rectifier
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF330EBPBF.pdf92 Pages, 2885 KB, Scan
IRF330EBPBF
International Rectifier
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF330EC.pdf92 Pages, 2885 KB, Scan
IRF330EC
International Rectifier
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF330ECPBF.pdf92 Pages, 2885 KB, Scan
IRF330ECPBF
International Rectifier
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF330ED.pdf92 Pages, 2885 KB, Scan
IRF330ED
International Rectifier
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF330EDPBF.pdf92 Pages, 2885 KB, Scan
IRF330EDPBF
International Rectifier
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF330EPBF.pdf92 Pages, 2885 KB, Scan
IRF330EPBF
International Rectifier
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Product Details Search Results:

Irf.com/IRF330E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1420 Bytes - 23:39:53, 16 November 2024
Irf.com/IRF330EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1428 Bytes - 23:39:53, 16 November 2024
Irf.com/IRF330EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1497 Bytes - 23:39:53, 16 November 2024
Irf.com/IRF330EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1428 Bytes - 23:39:53, 16 November 2024
Irf.com/IRF330EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1496 Bytes - 23:39:53, 16 November 2024
Irf.com/IRF330EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1426 Bytes - 23:39:53, 16 November 2024
Irf.com/IRF330ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1497 Bytes - 23:39:53, 16 November 2024
Irf.com/IRF330ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1430 Bytes - 23:39:53, 16 November 2024
Irf.com/IRF330EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1495 Bytes - 23:39:53, 16 November 2024
Irf.com/IRF330EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1491 Bytes - 23:39:53, 16 November 2024

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