Product Datasheet Search Results:

IRF330EB.pdf92 Pages, 2885 KB, Scan
IRF330EB
International Rectifier
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF330EBPBF.pdf92 Pages, 2885 KB, Scan
IRF330EBPBF
International Rectifier
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Product Details Search Results:

Irf.com/IRF330EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1428 Bytes - 20:28:52, 16 November 2024
Irf.com/IRF330EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1496 Bytes - 20:28:52, 16 November 2024

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