Product Datasheet Search Results:
6 Pages, 178 KB, Scan- IRF230-233
- Fairchild Semiconductor
- N-Channel Power MOSFETs 12A 150-200 V
Product Details Search Results:
Semelab.co.uk/IRF230-JQR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...
1442 Bytes - 02:08:09, 15 November 2024
Semelab.co.uk/IRF230-JQR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":...
1505 Bytes - 02:08:09, 15 November 2024
Semelab.co.uk/IRF230-QR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...
1437 Bytes - 02:08:09, 15 November 2024
Semelab.co.uk/IRF230-QR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":...
1499 Bytes - 02:08:09, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF2907ZS.pdf | 0.36 | 1 | Request | |
| IRF2903ZS.pdf | 0.41 | 1 | Request | |
| IRF2204L.pdf | 0.22 | 1 | Request | |
| IRF2204.pdf | 0.14 | 1 | Request | |
| IRF2804.pdf | 0.28 | 1 | Request | |
| IRF2807ZL.pdf | 0.27 | 1 | Request | |
| IRF2907Z.pdf | 0.36 | 1 | Request | |
| IRF2903Z.pdf | 0.41 | 1 | Request | |
| IRF2805.pdf | 0.15 | 1 | Request | |
| IRF2807.pdf | 0.16 | 1 | Request | |
| IRF2903ZL.pdf | 0.41 | 1 | Request | |
| IRF2807Z.pdf | 0.27 | 1 | Request |
