IRF230-QR-BR1
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

From Semelab Plc.

StatusACTIVE
Avalanche Energy Rating (Eas)150 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)9 A
Drain-source On Resistance-Max0.4000 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionTO-3, 2 PIN
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)36 A
Terminal FinishTIN SILVER COPPER
Terminal FormPIN/PEG
Terminal PositionBOTTOM
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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