Product Datasheet Search Results:
9 Pages, 474 KB, Original- IPD320N20N3G
- Infineon Technologies Ag
- 34 A, 200 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
9 Pages, 549 KB, Original- IPD320N20N3GATMA1
- Infineon Technologies Ag
- Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK T/R
10 Pages, 534 KB, Original- IPD320N20N3GBTMA1
- Infineon Technologies
- MOSFET N-Ch 200V 34A DPAK-2 OptiMOS 3
9 Pages, 474 KB, Original- IPD320N20N3GXT
- Infineon Technologies Ag
- Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-252
Product Details Search Results:
Infineon.com/IPD320N20N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"190 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0320 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FE...
1611 Bytes - 13:51:35, 18 November 2024
Infineon.com/IPD320N20N3GATMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"34(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"136(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1647 Bytes - 13:51:35, 18 November 2024
Infineon.com/IPD320N20N3GBTMA1
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"190 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0320 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","China ...
1660 Bytes - 13:51:35, 18 November 2024
Infineon.com/IPD320N20N3GXT
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"34 A","Mounting":"Surface Mount","Drain-Source On-Volt":"200 V","Pin Count":"2 +Tab","Power Dissipation":"136 W","Operating Temp Range":"-55C to 175C","Package Type":"TO-252","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.032 ohm","Number of Elements":"1"}...
1590 Bytes - 13:51:35, 18 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPD320N20N3G.pdf | 0.63 | 1 | Request |
