Product Datasheet Search Results:
10 Pages, 534 KB, Original- IPD320N20N3GBTMA1
- Infineon Technologies
- MOSFET N-Ch 200V 34A DPAK-2 OptiMOS 3
Product Details Search Results:
Infineon.com/IPD320N20N3GBTMA1
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"190 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0320 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","China ...
1660 Bytes - 13:49:53, 18 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPD320N20N3G.pdf | 0.63 | 1 | Request |
