Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.5 W","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.4500 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMI...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"3 Ohm @ 500mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP298E6327T SP000011109","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP298","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounting Type...

{"Product Category":"MOSFET","Series":"BSP298","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP298H6327XUSA1","RoHS":"Details","Manufacturer":"Infineon"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"400 V","Typical Rise Time":"25 ns","Typical Turn-Off Delay Time":"30 ns","Description":"Value","Maximum Continuous Drain Current":"0.5 A","Package":"3SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"10 ns","Channel Mode":"Depletion","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"3@10V Ohm","Manufacturer":"Infineon Technologies","Typical Fall Time":"20 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSP298","Rds On (Max) @ Id, Vgs":"3 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1,000","Input Capacitance (Ciss) @ Vds":"400pF @ 25V","Drain to Source Voltage (Vdss)":"400V","Current - Continuous Drain...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Input Capacitance (Ciss) @ Vds":"400pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP298","Rds On (Max) @ Id, Vgs":"3 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mountin...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.5 W","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.4500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Ty...