Product Datasheet Search Results:
- BSP298-L6327
- Infineon Technologies Ag
- 0.45 A, 400 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Infineon.com/BSP298-L6327
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.5 W","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.4500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Ty...
1591 Bytes - 19:57:10, 16 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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BSP298.pdf | 0.35 | 1 | Request |