Product Datasheet Search Results:

BSM300GA170DN2E3166.pdf9 Pages, 121 KB, Original
BSM300GA170DN2E3166.pdf9 Pages, 126 KB, Original
BSM300GA170DN2E3166
Siemens Semiconductors
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)

Product Details Search Results:

Infineon.com/BSM300GA170DN2
{"Factory Pack Quantity":"10","Product":"IGBT Silicon Modules","Product Category":"IGBT Modules","Brand":"Infineon Technologies","Continuous Collector Current at 25 C":"440 A","Collector- Emitter Voltage VCEO Max":"1700 V","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"62 mm","Configuration":"Single Dual Emitter","Maximum Operating Temperature":"+ 150 C","RoHS":"Details","Manufacturer":"Infineon"}...
1394 Bytes - 22:35:56, 18 November 2024

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