Product Datasheet Search Results:
10 Pages, 231 KB, Original- BSM300GA170DN2
- Infineon Technologies [eupec]
- BSM300GA170DN2
9 Pages, 121 KB, Original- BSM300GA170DN2E3166
- Eupec Power Semiconductors
- TRANS IGBT MODULE N-CH 1700V 440A
10 Pages, 307 KB, Original- BSM300GA170DN2S
- Infineon Technologies [eupec]
- BSM300GA170DN2S
1 Pages, 50 KB, Original- BSM300GA170DN2
- Infineon Technologies
- Circuit Diagram
9 Pages, 126 KB, Original- BSM300GA170DN2E3166
- Siemens Semiconductors
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
9 Pages, 126 KB, Original- BSM300GA170DN2S
- Siemens Semiconductors
- IGBT Power Module
Product Details Search Results:
Infineon.com/BSM300GA170DN2
{"Factory Pack Quantity":"10","Product":"IGBT Silicon Modules","Product Category":"IGBT Modules","Brand":"Infineon Technologies","Continuous Collector Current at 25 C":"440 A","Collector- Emitter Voltage VCEO Max":"1700 V","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"62 mm","Configuration":"Single Dual Emitter","Maximum Operating Temperature":"+ 150 C","RoHS":"Details","Manufacturer":"Infineon"}...
1394 Bytes - 18:27:39, 30 March 2025
