Product Datasheet Search Results:

BSM150GB120DN2E3166.pdf9 Pages, 127 KB, Original
BSM150GB120DN2E3166
Eupec Power Semiconductors
TRANS IGBT MODULE N-CH 1200V 210A 7HALF-BRIDGE 2
BSM150GB120DN2E3166.pdf9 Pages, 132 KB, Original
BSM150GB120DN2E3166
Siemens Semiconductors
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)

Product Details Search Results:

Infineon.com/BSM150GB120DN2
{"Gate-Emitter Leakage Current":"320 nA","Continuous Collector Current at 25 C":"210 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"1.25 kW","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"Half Bridge2","Configuration":"Half Bridge",...
1580 Bytes - 09:45:51, 06 December 2024
Infineon.com/BSM150GB120DN2HOSA1
{"Collector Current (DC) ":"210(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Configuration":"Dual","Pin Count":"7"}...
1428 Bytes - 09:45:51, 06 December 2024

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