BSM150GB120DN2
IGBT Modules 1200V 150A DUAL

From Infineon Technologies

BrandInfineon Technologies
Collector- Emitter Voltage VCEO Max1200 V
Collector-Emitter Saturation Voltage2.5 V
ConfigurationHalf Bridge
Continuous Collector Current at 25 C210 A
Factory Pack Quantity500
Gate-Emitter Leakage Current320 nA
ManufacturerInfineon
Maximum Gate Emitter Voltage20 V
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 40 C
Mounting StyleScrew
Package / CaseHalf Bridge2
Pd - Power Dissipation1.25 kW
ProductIGBT Silicon Modules
Product CategoryIGBT Modules
RoHSDetails

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