Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"966 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.25 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25.5 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Factory Pack Quantity":"50","Vds - Drain-Source Breakdown Voltage":"900 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Brand":"Toshiba","Id - Continuous Drain Current":"8.5 A","Configuration":"Single","Pd - Power Dissipation":"90 W","Mounting Style":"Through Hole","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1.25 Ohms","Package / Case":"TO-3P-3","Vgs - Gate-Source Breakdown Voltage":"30 V","Fall Time":"25 ns","Maximum Operatin...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-3P-3,TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"-","Standard Package":"50","Supplier Device Package":"TO-3P(N)IS","Datasheets":"Mosfets Prod Guide 2SK3017","Rds On (Max) @ Id, Vgs":"1.25 Ohm @ 4A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"90W","Package / Case":"TO-3P-3, SC-65-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"9...