Product Datasheet Search Results:
59 Pages, 1814 KB, Original- 2SK3017(F)
- Toshiba
- MOSFET N-CH 900V 8.5A TO-3PN - 2SK3017(F)
63 Pages, 1628 KB, Original- 2SK3017(F)
- Toshiba Semiconductor And Storage
- MOSFET N-CH 900V 8.5A TO-3PN
Product Details Search Results:
Toshiba.co.jp/2SK3017(F)
{"Factory Pack Quantity":"50","Vds - Drain-Source Breakdown Voltage":"900 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Brand":"Toshiba","Id - Continuous Drain Current":"8.5 A","Configuration":"Single","Pd - Power Dissipation":"90 W","Mounting Style":"Through Hole","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1.25 Ohms","Package / Case":"TO-3P-3","Vgs - Gate-Source Breakdown Voltage":"30 V","Fall Time":"25 ns","Maximum Operatin...
1517 Bytes - 04:42:05, 16 November 2024
Toshiba.semicon-storage.com/2SK3017(F)
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-3P-3,TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"-","Standard Package":"50","Supplier Device Package":"TO-3P(N)IS","Datasheets":"Mosfets Prod Guide 2SK3017","Rds On (Max) @ Id, Vgs":"1.25 Ohm @ 4A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"90W","Package / Case":"TO-3P-3, SC-65-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"9...
1723 Bytes - 04:42:05, 16 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3017.pdf | 0.41 | 1 | Request |
