Product Details Search Results:
Hitachi.co.jp/2SB638H
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"5.0","Absolute Max. Power Diss. (W)":"80","I(CBO) Max. (A)":"100u","I(C) Abs.(A) Collector Current":"10","Semiconductor Material":"Silicon","h(FE) Max. Current gain.":"20k","@V(CE) (V) (Test Condition)":"3.0","V(BR)CEO (V)":"100","Package":"TO-3","h(FE) Min. Static Current Gain":"1.0k","V(BR)CBO (V)":"100","Military":"N"}...
867 Bytes - 23:54:41, 17 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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XC7A200T-L2SB484E.pdf | 0.74 | 1 | Request | |
XC7A200T-L2SBG484E.pdf | 0.74 | 1 | Request | |
XC7A200T-2SB484C.pdf | 0.74 | 1 | Request | |
XC7A200T-2SBG484I.pdf | 0.74 | 1 | Request | |
XC7A200T-2SBG484C.pdf | 0.74 | 1 | Request | |
VABV-S1-2SB-N12.pdf | 9.65 | 1 | Request | |
VABV-S1-2SB-G12.pdf | 9.65 | 1 | Request | |
ISA3-HFP-2SB-L3.pdf | 10.38 | 1 | Request | |
ISA3-HCN-2SB.pdf | 10.38 | 1 | Request | |
NES1-022SBE.pdf | 3.09 | 1 | Request | |
NES1-002SBE.pdf | 3.09 | 1 | Request | |
NES1-002SB.pdf | 3.09 | 1 | Request |