Product Datasheet Search Results:

2N6798E.pdf11 Pages, 324 KB, Scan
2N6798E
International Rectifier
200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6798EA.pdf11 Pages, 324 KB, Scan
2N6798EA
International Rectifier
200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6798EAPBF.pdf11 Pages, 324 KB, Scan
2N6798EAPBF
International Rectifier
200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6798EB.pdf11 Pages, 324 KB, Scan
2N6798EB
International Rectifier
200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6798EBPBF.pdf11 Pages, 324 KB, Scan
2N6798EBPBF
International Rectifier
200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6798EC.pdf11 Pages, 324 KB, Scan
2N6798EC
International Rectifier
200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6798ED.pdf11 Pages, 324 KB, Scan
2N6798ED
International Rectifier
200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6798EDPBF.pdf11 Pages, 324 KB, Scan
2N6798EDPBF
International Rectifier
200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6798EPBF.pdf11 Pages, 324 KB, Scan
2N6798EPBF
International Rectifier
200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

Product Details Search Results:

Irf.com/2N6798E
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"200 V","Number o...
1215 Bytes - 02:51:31, 17 November 2024
Irf.com/2N6798EA
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"200 V","Number o...
1220 Bytes - 02:51:31, 17 November 2024
Irf.com/2N6798EAPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...
1287 Bytes - 02:51:31, 17 November 2024
Irf.com/2N6798EB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"200 V","Number o...
1222 Bytes - 02:51:31, 17 November 2024
Irf.com/2N6798EBPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...
1289 Bytes - 02:51:31, 17 November 2024
Irf.com/2N6798EC
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"200 V","Number o...
1218 Bytes - 02:51:31, 17 November 2024
Irf.com/2N6798ED
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"200 V","Number o...
1218 Bytes - 02:51:31, 17 November 2024
Irf.com/2N6798EDPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...
1285 Bytes - 02:51:31, 17 November 2024
Irf.com/2N6798EPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...
1279 Bytes - 02:51:31, 17 November 2024

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