Product Datasheet Search Results:
11 Pages, 324 KB, Scan- 2N6798EA
- International Rectifier
- 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
11 Pages, 324 KB, Scan- 2N6798EAPBF
- International Rectifier
- 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Irf.com/2N6798EA
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"200 V","Number o...
1220 Bytes - 05:51:51, 17 November 2024
Irf.com/2N6798EAPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...
1287 Bytes - 05:51:51, 17 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
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