Product Datasheet Search Results:
2 Pages, 38 KB, Original- 2N6660X
- Semelab Plc.
- 1.1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39
2 Pages, 38 KB, Original- 2N6660X-QR-EB
- Semelab Plc.
- 1.1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39
Product Details Search Results:
Semelab.co.uk/2N6660X
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHIN...
1401 Bytes - 12:16:20, 14 November 2024
Semelab.co.uk/2N6660X-QR-EB
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHIN...
1435 Bytes - 12:16:20, 14 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 7BT32N6635.pdf | 0.04 | 1 | Request | |
| VLVAW2N66100AB.pdf | 4.86 | 1 | Request | |
| VLVAW2N66075AB.pdf | 4.86 | 1 | Request | |
| VLVAW2N66075AA.pdf | 4.86 | 1 | Request |
