Product Datasheet Search Results:

2N6660X-QR-EB.pdf2 Pages, 38 KB, Original
2N6660X-QR-EB
Semelab Plc.
1.1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39

Product Details Search Results:

Semelab.co.uk/2N6660X-QR-EB
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHIN...
1435 Bytes - 15:28:59, 31 October 2024

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