Datasheet.Directory

{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5807US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@Tem...

{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5807US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@Te...

{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5807US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@T...

{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5807US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@...

{"Peak Rep Rev Volt":"50(V)","Product Depth (mm)":"3.6(mm)","Peak Non-Repetitive Surge Current":"125(A)","Forward Current":"6000(mA)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Peak Reverse Current":"5(uA)","Forward Voltage":"0.875(V)","Product Length (mm)":"4.8(mm)","Rectifier Type":"Switching Diode","Operating Temperature Classification":"Military","Rad Hardened":"No","Rev Recov Time":"30(ns)","Package Type":"SMB","Operating Temp Range":"-65C to 175C","Maximum Forward Current":"6000...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Product Photos":"1N6643US","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"-","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US/URS","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 175\...

{"Category":"Rectifier","Peak Non-Repetitive Surge Current":"125 A","Description":"Value","Package":"2E-MELF","Peak Average Forward Current":"6 A","Mounting":"Surface Mount","Peak Reverse Current":"5 uA","Peak Reverse Recovery Time":"30 ns","Operating Temperature":"-65 to 175 \u00b0C","Peak Forward Voltage":"0.875@4A V","Peak Reverse Repetitive Voltage":"50 V","Configuration":"Single","Type":"Switching Diode","Manufacturer":"Microsemi"}...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US/URS","Current - Average Rectified (Io)":"6A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u0...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WRAP AROUND","Application":"ULTRA FAST RECOVERY","Number of Phases":"1","Package Shape":"ROUND","Reverse Recovery Time-Max":"0.0300 us","Status":"ACTIVE","Package Body Material":"GLASS","Rep Pk Reverse Voltage-Max":"50 V","Configuration":"SINGLE","Power Dissipation Limit-Max":"5 W","Non-rep Pk Forward Current-Max":"125 A","Average Forward Current-Max":"3 A","Surface Mount":"Yes","Case Connection":"ISOLATED","Mfr Package Description":"HERMETIC SEALED, GLASS, MEL...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US/URS","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u0...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"D-5B","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US/URS","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b0C",...