Product Datasheet Search Results:
- 1N5807US+JAN
- Defense Electronics Supply Center
- 6A Iout, 50V Vrrm Fast Recovery Rectifier
- 1N5807US+JANS
- Defense Electronics Supply Center
- 6A Iout, 50V Vrrm Fast Recovery Rectifier
- 1N5807US+JANTX
- Defense Electronics Supply Center
- 6A Iout, 50V Vrrm Fast Recovery Rectifier
- 1N5807US+JANTXV
- Defense Electronics Supply Center
- 6A Iout, 50V Vrrm Fast Recovery Rectifier
Product Details Search Results:
Dla.mil/1N5807US+JAN
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5807US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@Tem...
1151 Bytes - 00:31:45, 06 November 2024
Dla.mil/1N5807US+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5807US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@Te...
1156 Bytes - 00:31:45, 06 November 2024
Dla.mil/1N5807US+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5807US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@T...
1162 Bytes - 00:31:45, 06 November 2024
Dla.mil/1N5807US+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5807US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@...
1169 Bytes - 00:31:45, 06 November 2024
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