- 2N1913+JAN
- Defense Electronics Supply Center
- 200V V[drm] Max., 70A I[T] Max. Silicon Controlled Rectifier
- 2N1913+JANTX
- Defense Electronics Supply Center
- 200V V[drm] Max., 70A I[T] Max. Silicon Controlled Rectifier
- 2N1913+JANTXV
- Defense Electronics Supply Center
- 200V V[drm] Max., 70A I[T] Max. Silicon Controlled Rectifier
- 2N1913
- Aei Semiconductors
- Power Semiconductors Data Book 1974
- 2N1913
- General Electric
- Semiconductor Data Book 1971
- JAN2N1913
- General Electric
- Semiconductor Data Book 1971
- 2N1913
- International Rectifier
- Silicon Controlled Rectifier
- 2N1913M
- International Rectifier
- 200V V[drm] Max., 70A I[T] Max. Silicon Controlled Rectifier
- JAN2N1913
- International Rectifier
- 78.5 A, 200 V, SCR, TO-209AC
- JANTX2N1913
- International Rectifier
- 110 A, 200 V, SCR, TO-209AC
- 2N1913
- Microsemi Corp.
- 110 A, SCR, TO-209AA
- 99003-2N1913
- Microsemi Corporation
- Silicon Controlled Rectifier
- 99003-2N1913 1
- Microsemi Corporation
- Silicon Controlled Rectifier
- 99003-2N19131
- Microsemi Corp.
- 79 A, SCR, TO-209AC
- 2N1913
- Richardson Electronics
- Phase Control Silicon Controlled Rectifiers
- 2N1913
- Semitronics Corp.
- Silicon Controlled Rectifiers - Thyristors and Triggers
- RR1632N1913B-T1-LF
- Thin Film Technology Corporation
- RESISTOR, THIN FILM, 0.125 W, 0.1 %, 10 ppm, 191000 ohm, SURFACE MOUNT, 1206
- RR1632N1913B-T5-LF
- Thin Film Technology Corporation
- RESISTOR, THIN FILM, 0.125 W, 0.1 %, 10 ppm, 191000 ohm, SURFACE MOUNT, 1206
- RR2632N1913B-T1-LF
- Thin Film Technology Corporation
- RESISTOR, THIN FILM, 0.25 W, 0.1 %, 10 ppm, 191000 ohm, SURFACE MOUNT, 1210
- RR2632N1913B-T5-LF
- Thin Film Technology Corporation
- RESISTOR, THIN FILM, 0.25 W, 0.1 %, 10 ppm, 191000 ohm, SURFACE MOUNT, 1210
- RR2632N1913B-T-LF
- Thin Film Technology Corporation
- RESISTOR, THIN FILM, 0.25 W, 0.1 %, 10 ppm, 191000 ohm, SURFACE MOUNT, 1210