Product Datasheet Search Results:

VVC910.pdf1 Pages, 126 KB, Scan
VVC910
N/a
Shortform Semicon, Diode, and SCR Datasheets
VVC910A.pdf1 Pages, 126 KB, Scan
VVC910A
N/a
Shortform Semicon, Diode, and SCR Datasheets
VVC910B.pdf1 Pages, 126 KB, Scan
VVC910B
N/a
Shortform Semicon, Diode, and SCR Datasheets
VVC910C.pdf1 Pages, 126 KB, Scan
VVC910C
N/a
Shortform Semicon, Diode, and SCR Datasheets
VVC910D.pdf1 Pages, 126 KB, Scan
VVC910D
N/a
Shortform Semicon, Diode, and SCR Datasheets

Product Details Search Results:

Americanmicrosemi.com/VVC910
{"Status":"Active","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
749 Bytes - 12:36:34, 01 November 2024
Americanmicrosemi.com/VVC910A
{"Status":"Active","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
754 Bytes - 12:36:34, 01 November 2024
Americanmicrosemi.com/VVC910B
{"Status":"Active","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
755 Bytes - 12:36:34, 01 November 2024
Americanmicrosemi.com/VVC910C
{"Status":"Active","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
756 Bytes - 12:36:34, 01 November 2024
Americanmicrosemi.com/VVC910D
{"Status":"Active","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
754 Bytes - 12:36:34, 01 November 2024
Various/VVC910
{"C1/C2 Min. Capacitance Ratio":"2.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","Q Factor Min.":"150","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
757 Bytes - 12:36:34, 01 November 2024
Various/VVC910A
{"C1/C2 Min. Capacitance Ratio":"2.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","Q Factor Min.":"150","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 12:36:34, 01 November 2024
Various/VVC910B
{"C1/C2 Min. Capacitance Ratio":"2.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","Q Factor Min.":"150","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 12:36:34, 01 November 2024
Various/VVC910C
{"C1/C2 Min. Capacitance Ratio":"2.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","Q Factor Min.":"150","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 12:36:34, 01 November 2024
Various/VVC910D
{"C1/C2 Min. Capacitance Ratio":"2.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","Q Factor Min.":"150","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 12:36:34, 01 November 2024

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