Product Datasheet Search Results:
- VP1110N5
- Supertex, Inc.
- P-Channel Enhancement-Mode Vertical DMOS Power FETs
Product Details Search Results:
Supertex.com/VP1110N5
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"45 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"RECTANGULAR","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Turn-on Time-Max (ton)":"70 ns","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Drain Current-Max (Abs) (ID)":"4 A","Sub Category":"Other Transistors","Peak Reflow Temperature (Cel)":"NOT SPECIFIED"...
1977 Bytes - 18:49:56, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
YVP110-F1A6N_LC1_LV1_GP_KS25.pdf | 4.52 | 1 | Request | |
VP114ZZZZZZ8.pdf | 0.04 | 1 | Request | |
VP114ZZZZZZ9.pdf | 0.04 | 1 | Request | |
E3FB-VP11_2M.pdf | 6.37 | 1 | Request | |
E3FA-VP11_2M.pdf | 6.37 | 1 | Request |