Datasheet.Directory

{"Status":"Active"}...

{"V(CE)sat Max.(V)":"4.0","V(BR)CES (V)":"1.2k","Absolute Max. Power Diss. (W)":"600","I(GES) Max. (A)":"500n","t(d)off Max. (s) Off time":"350n","@V(GES) (V) (Test Condition)":"20","C(iee) (Max) (F)":"14","V(BR)GES (V)":"20","I(C) Abs.(A) Collector Current":"100","Circuits Per Package":"1","@V(CES) (V) (Test Condition)":"1.2k","I(CES) Min. (A)":"8.0m","Package":"MODULE-var","@V(CE) (V) (Test Condition)":"20","V(GE)th Max. (V)":"8.0","td(on) Max (s) On time delay":"300n","@I(C) (A) (Test Condition)":"30m","...

{"Gate-emitter Voltage-Max":"20 V","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"600 W","Operating Temperature-Max":"150 Cel","Collector Current-Max (IC)":"100 A","Qualification Status":"COMMERCIAL","Package Shape":"UNSPECIFIED","Additional Feature":"HIGH SPEED","Status":"Discontinued","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Sub Category":"Insulated Gate BIP Transistors","Configuration":"SINGLE WITH BUILT-IN DIODE","VCEsat-Max":"4 V","Collector-emitter Voltag...