VDI100-12S3
100 A, 1200 V, N-CHANNEL IGBT

From Zilog

StatusDiscontinued
Additional FeatureHIGH SPEED
Case ConnectionISOLATED
Collector Current-Max (IC)100 A
Collector-emitter Voltage-Max1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-emitter Voltage-Max20 V
JESD-30 CodeX-PUFM-X3
Number of Elements1
Number of Terminals3
Operating Temperature-Max150 Cel
Package Body MaterialPLASTIC/EPOXY
Package ShapeUNSPECIFIED
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation Ambient-Max600 W
Power Dissipation-Max (Abs)600 W
Qualification StatusCOMMERCIAL
Sub CategoryInsulated Gate BIP Transistors
Surface MountNO
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Transistor ApplicationPOWER CONTROL
Transistor Element MaterialSILICON
VCEsat-Max4 V

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