Product Datasheet Search Results:

UNIVERSAL-FLITE-OPTIMIZER-MINI.pdf2 Pages, 20 KB, Original
UNIVERSAL-FLITE-OPTIMIZER-PCI.pdf2 Pages, 20 KB, Original
UNIVERSAL-FLITE-OPTIMIZER-USB.pdf2 Pages, 20 KB, Original
UNIVERSAL SERIAL BUS SPECIFICATION.pdf268 Pages, 1037 KB, Original
UNIVERSAL STARTERKIT FOR ETXEXPRESS.pdf6 Pages, 1021 KB, Original
UNIVERSAL STARTERKIT FOR ETXEXPRESS
Kontron
Universal Starterkit for ETXexpress
UNIVERSAL EXPANSION BOARD.pdf7 Pages, 372 KB, Original
UNIVERSAL OEM REFERENCE BOARD.pdf496 Pages, 38270 KB, Original
UNIVERSAL OEM REFERENCE BOARD
Pycom
G01/L01/L04/W01 Combo Wireless Module Evaluation Board
LNB-201-UNIVERSAL.pdf1 Pages, 10 KB, Original
SHRINKIT 321 UNIVERSAL.pdf2 Pages, 209 KB, Original
SHRINKIT 321+ UNIVERSAL.pdf4 Pages, 137 KB, Original
1.8 MM UNIVERSAL CONTACT.pdf3 Pages, 729 KB, Original
6000270 UNIVERSAL DEV KIT.pdf4 Pages, 77 KB, Original
6000270 UNIVERSAL DEV KIT.pdf4 Pages, 77 KB, Original
AD14AA025.pdf1 Pages, 49 KB, Original
AD14AA025
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, 5 Tap Equallly Spaced
AD14AA050.pdf1 Pages, 49 KB, Original
AD14AA050
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, 5 Tap Equallly Spaced
AD14AA075.pdf1 Pages, 49 KB, Original
AD14AA075
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, 5 Tap Equallly Spaced
AD14AA100.pdf1 Pages, 49 KB, Original
AD14AA100
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, 5 Tap Equallly Spaced
AD14AA125.pdf1 Pages, 49 KB, Original
AD14AA125
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, 5 Tap Equallly Spaced
AD14AA150.pdf1 Pages, 49 KB, Original
AD14AA150
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, 5 Tap Equallly Spaced
AD14AA175.pdf1 Pages, 49 KB, Original
AD14AA175
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, 5 Tap Equallly Spaced
AD14AA200.pdf1 Pages, 49 KB, Original
AD14AA200
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, 5 Tap Equallly Spaced
AD14AA250.pdf1 Pages, 49 KB, Original
AD14AA250
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, 5 Tap Equallly Spaced
AD14AA300.pdf1 Pages, 49 KB, Original
AD14AA300
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, 5 Tap Equallly Spaced
AD14AA400.pdf1 Pages, 49 KB, Original
AD14AA400
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, 5 Tap Equallly Spaced
AD14AA500.pdf1 Pages, 49 KB, Original
AD14AA500
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, 5 Tap Equallly Spaced
AD14AB005.pdf1 Pages, 50 KB, Original
AD14AB005
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, Triple
AD14AB010.pdf1 Pages, 50 KB, Original
AD14AB010
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, Triple
AD14AB020.pdf1 Pages, 50 KB, Original
AD14AB020
Universal Microelectronics Co., Ltd.
Active Delay Lines, 14 Pin DIL, Triple

Product Details Search Results:

Hellermanntyton.com/SHRINKIT 321 UNIVERSAL
763 Bytes - 09:28:53, 20 September 2024
Hellermanntyton.com/SHRINKIT 321+ UNIVERSAL
767 Bytes - 09:28:53, 20 September 2024
Ittcannon.com/1.8 MM UNIVERSAL CONTACT
{"Packaging ":"Tape and Reel","Current Rating (Max)":"3(A)","Shielded":"NO","Body Orientation":"Straight","Contact Gender":"M","Product Length (mm)":"3.41(mm)","Mounting Style":"Surface Mount","Product Depth (mm)":"0.9(mm)","Contact Resistance Max ":"20(mohm)","Contact Plating":"Gold Over Nickel","Termination Method":"Solder","Product Height (mm)":"1.8(mm)","Contact Material":"Beryllium Copper"}...
1502 Bytes - 09:28:53, 20 September 2024
Pycom/UNIVERSAL EXPANSION BOARD
815 Bytes - 09:28:53, 20 September 2024
Pycom/UNIVERSAL OEM REFERENCE BOARD
1098 Bytes - 09:28:53, 20 September 2024
Sierra_wireless/6000270 UNIVERSAL DEV KIT
766 Bytes - 09:28:53, 20 September 2024
Universal_science_uk/BONDLINE 1800 - 100M
812 Bytes - 09:28:53, 20 September 2024
Universal_science_uk/BONDLINE 1800 - 33MM
812 Bytes - 09:28:53, 20 September 2024
Universal_science_uk/BONDLINE 1800 - 46MM
812 Bytes - 09:28:53, 20 September 2024
Universal_science_uk/BONDLINE 1800 - 50MM
812 Bytes - 09:28:53, 20 September 2024
Universal_science_uk/BONDLINE 1800 - 70MM
812 Bytes - 09:28:53, 20 September 2024
Universal_science_uk/BONDLINE 700 - 100MM
812 Bytes - 09:28:53, 20 September 2024
Universal_science_uk/BONDLINE 700 - 33MM
805 Bytes - 09:28:53, 20 September 2024
Universal_science_uk/BONDLINE 700 - 46MM
803 Bytes - 09:28:53, 20 September 2024
Universal_science_uk/BONDLINE 700 - 50MM
806 Bytes - 09:28:53, 20 September 2024
Universal_science_uk/BONDLINE 700 - 70MM
807 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/SD210MKN
{"@V(DS) (V) (Test Condition)":"10","Absolute Max. Power Diss. (W)":"300m","Package":"TO-72","g(fs) Max, (S) Trans. conduct,":"15m","@(VDS) (V) (Test Condition)":"40","V(BR)DSS (V)":"30","V(BR)GSS (V)":"40","g(fs) Min. (S) Trans. conduct.":"10m","I(D) Abs. Drain Current (A)":"50m","Military":"N","r(DS)on Max. (Ohms)":"50"}...
830 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/SD211MKN
{"@V(DS) (V) (Test Condition)":"10","Absolute Max. Power Diss. (W)":"300m","Package":"TO-72","g(fs) Max, (S) Trans. conduct,":"15m","@(VDS) (V) (Test Condition)":"25","V(BR)DSS (V)":"30","V(BR)GSS (V)":"25","g(fs) Min. (S) Trans. conduct.":"10m","I(D) Abs. Drain Current (A)":"50m","Military":"N","r(DS)on Max. (Ohms)":"50"}...
830 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/SD5000CHP
{"V(BR)DSS (V)":"20","I(D) Abs. Drain Current (A)":"50m","Military":"N","Package":"Chip"}...
631 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/SD5001CHP
{"V(BR)DSS (V)":"10","I(D) Abs. Drain Current (A)":"50m","Military":"N","Package":"Chip"}...
631 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/SD5002CHP
{"r(DS)on (Ohms)":"70","Features":"Norm-Open","Package":"Chip","@Vd (test) (V)":"5.0","Control Logic Level High (V)":"2.0","Sw. Volt P-P Max.(V)":"15","Pins":"N\/A","Military":"N","Technology":"NMOS","Control Logic Level Low (V)":"0.1","@I(S) (test) (A)":"1.0m"}...
785 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/SD5100CHP
{"r(DS)on (Ohms)":"80","Features":"Norm-Open","@Vd (test) (V)":"5.0","Package":"Chip","Control Logic Level High (V)":"2.0","Sw. Volt P-P Max.(V)":"30","Analog Sw. Cur. P-P Max.":"50m","Pins":"N\/A","Military":"N","Technology":"NMOS","Control Logic Level Low (V)":"0.5","@I(S) (test) (A)":"1.0m"}...
819 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/SD5101CHP
{"r(DS)on (Ohms)":"80","Features":"Norm-Open","@Vd (test) (V)":"5.0","Package":"Chip","Control Logic Level High (V)":"2.0","Sw. Volt P-P Max.(V)":"15","Analog Sw. Cur. P-P Max.":"50m","Pins":"N\/A","Military":"N","Technology":"NMOS","Control Logic Level Low (V)":"0.5","@I(S) (test) (A)":"1.0m"}...
819 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/SD5200CHP
{"r(DS)on (Ohms)":"80","Features":"Norm-Open","@Vd (test) (V)":"5.0","Package":"Chip","Control Logic Level High (V)":"2.0","Sw. Volt P-P Max.(V)":"30","Analog Sw. Cur. P-P Max.":"50m","Pins":"N\/A","Military":"N","Technology":"NMOS","Control Logic Level Low (V)":"0.5","@I(S) (test) (A)":"1.0m"}...
820 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TM1060
{"Status":"Discontinued","Logic Level Family":"CMOS","Vsup(-) Nom.(V) Neg.Sup.Volt.":"0.0","V(OL)Max.(V)Lo Level Out.Volt.":"0.7","Package":"DIP","Vsup(+) Nom.(V) Pos.Sup.Volt.":"12","Integral Nonlinearity @25°C":".50","Volt or Cur. Mode":"Voltage","V(OH)Min.(V)Hi Level Out.Volt.":"5.0","Vin Range (Vp-p) (V)":"11","Outp Arith. Code":"A","Pins":"24","Military":"N"}...
894 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF120CHP
{"C(iss) Max. (F)":"3.0p","Absolute Max. Power Diss. (W)":"500m","g(fs) Max, (S) Trans. conduct,":"14m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"5.0m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.5","@(VDS) (V) (Test Condition)":"25","V(GS)th Min. (V)":"0.5","Package":"Chip","V(BR)DSS (V)":"25","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)"...
1064 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF120HD
{"C(iss) Max. (F)":"3.0p","Absolute Max. Power Diss. (W)":"500m","g(fs) Max, (S) Trans. conduct,":"14m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"5.0m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.5","@(VDS) (V) (Test Condition)":"25","V(GS)th Min. (V)":"0.5","Package":"TO-99","V(BR)DSS (V)":"45","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)...
1042 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF120HD/R
{"C(iss) Max. (F)":"3.0p","Absolute Max. Power Diss. (W)":"500m","g(fs) Max, (S) Trans. conduct,":"14m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"5.0m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.5","@(VDS) (V) (Test Condition)":"25","V(GS)th Min. (V)":"0.5","Package":"TO-99","V(BR)DSS (V)":"45","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)...
1059 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF121CHP
{"C(iss) Max. (F)":"3.0p","Absolute Max. Power Diss. (W)":"500m","g(fs) Max, (S) Trans. conduct,":"14m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"5.0m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.5","@(VDS) (V) (Test Condition)":"25","V(GS)th Min. (V)":"0.5","Package":"Chip","V(BR)DSS (V)":"25","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)"...
1065 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF121HD
{"C(iss) Max. (F)":"3.0p","Absolute Max. Power Diss. (W)":"500m","g(fs) Max, (S) Trans. conduct,":"14m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"5.0m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.5","@(VDS) (V) (Test Condition)":"25","V(GS)th Min. (V)":"0.5","Package":"TO-99","V(BR)DSS (V)":"45","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)...
1043 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF121HD/R
{"C(iss) Max. (F)":"3.0p","Absolute Max. Power Diss. (W)":"500m","g(fs) Max, (S) Trans. conduct,":"14m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"5.0m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.5","@(VDS) (V) (Test Condition)":"25","V(GS)th Min. (V)":"0.5","Package":"TO-99","V(BR)DSS (V)":"45","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)...
1059 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF122CHP
{"C(iss) Max. (F)":"3.0p","Absolute Max. Power Diss. (W)":"500m","g(fs) Max, (S) Trans. conduct,":"14m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"5.0m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.5","@(VDS) (V) (Test Condition)":"25","V(GS)th Min. (V)":"0.5","Package":"Chip","V(BR)DSS (V)":"25","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)"...
1065 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF122HD
{"C(iss) Max. (F)":"3.0p","Absolute Max. Power Diss. (W)":"500m","g(fs) Max, (S) Trans. conduct,":"14m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"5.0m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.5","@(VDS) (V) (Test Condition)":"25","V(GS)th Min. (V)":"0.5","Package":"TO-99","V(BR)DSS (V)":"45","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)...
1043 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF122HD/R
{"C(iss) Max. (F)":"3.0p","Absolute Max. Power Diss. (W)":"500m","g(fs) Max, (S) Trans. conduct,":"14m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"5.0m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.5","@(VDS) (V) (Test Condition)":"25","V(GS)th Min. (V)":"0.5","Package":"TO-99","V(BR)DSS (V)":"45","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)...
1059 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF123CHP
{"C(iss) Max. (F)":"3.0p","Absolute Max. Power Diss. (W)":"500m","g(fs) Max, (S) Trans. conduct,":"14m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"5.0m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.5","@(VDS) (V) (Test Condition)":"25","V(GS)th Min. (V)":"0.5","Package":"Chip","V(BR)DSS (V)":"25","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)"...
1064 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF123HD
{"C(iss) Max. (F)":"3.0p","Absolute Max. Power Diss. (W)":"500m","g(fs) Max, (S) Trans. conduct,":"14m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"5.0m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.5","@(VDS) (V) (Test Condition)":"25","V(GS)th Min. (V)":"0.5","Package":"TO-99","V(BR)DSS (V)":"45","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)...
1043 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF123HD/R
{"C(iss) Max. (F)":"3.0p","Absolute Max. Power Diss. (W)":"500m","g(fs) Max, (S) Trans. conduct,":"14m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"5.0m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.5","@(VDS) (V) (Test Condition)":"25","V(GS)th Min. (V)":"0.5","Package":"TO-99","V(BR)DSS (V)":"45","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)...
1059 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF210CHP
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"500f","Absolute Max. Power Diss. (W)":"800m","Package":"TO-72","V(BR)DSS (V)":"20","g(fs) Min. (S) Trans. conduct.":"6m","I(D) Abs. Drain Current (A)":"30m","Military":"N","r(DS)on Max. (Ohms)":"220"}...
765 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF210DE
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"500f","Absolute Max. Power Diss. (W)":"800m","Package":"TO-72","V(BR)DSS (V)":"20","g(fs) Min. (S) Trans. conduct.":"6m","I(D) Abs. Drain Current (A)":"30m","Military":"N","r(DS)on Max. (Ohms)":"220"}...
761 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF210DE/R
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"500f","Absolute Max. Power Diss. (W)":"800m","Package":"TO-72","V(BR)DSS (V)":"20","g(fs) Min. (S) Trans. conduct.":"6m","I(D) Abs. Drain Current (A)":"30m","Military":"N","r(DS)on Max. (Ohms)":"220"}...
777 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF211CHP
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"500f","Absolute Max. Power Diss. (W)":"800m","Package":"TO-72","V(BR)DSS (V)":"20","g(fs) Min. (S) Trans. conduct.":"6m","I(D) Abs. Drain Current (A)":"30m","Military":"N","r(DS)on Max. (Ohms)":"220"}...
765 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF211DE
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"500f","Absolute Max. Power Diss. (W)":"800m","Package":"TO-72","V(BR)DSS (V)":"20","g(fs) Min. (S) Trans. conduct.":"6m","I(D) Abs. Drain Current (A)":"30m","Military":"N","r(DS)on Max. (Ohms)":"220"}...
761 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF211DE/R
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"500f","Absolute Max. Power Diss. (W)":"800m","Package":"TO-72","V(BR)DSS (V)":"20","g(fs) Min. (S) Trans. conduct.":"6m","I(D) Abs. Drain Current (A)":"30m","Military":"N","r(DS)on Max. (Ohms)":"220"}...
777 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF212CHP
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"500f","Absolute Max. Power Diss. (W)":"800m","Package":"TO-72","V(BR)DSS (V)":"10","g(fs) Min. (S) Trans. conduct.":"6m","I(D) Abs. Drain Current (A)":"30m","Military":"N","r(DS)on Max. (Ohms)":"220"}...
766 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF212DE
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"500f","Absolute Max. Power Diss. (W)":"800m","Package":"TO-72","V(BR)DSS (V)":"10","g(fs) Min. (S) Trans. conduct.":"6m","I(D) Abs. Drain Current (A)":"30m","Military":"N","r(DS)on Max. (Ohms)":"220"}...
761 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF212DE/R
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"500f","Absolute Max. Power Diss. (W)":"800m","Package":"TO-72","V(BR)DSS (V)":"10","g(fs) Min. (S) Trans. conduct.":"6m","I(D) Abs. Drain Current (A)":"30m","Military":"N","r(DS)on Max. (Ohms)":"220"}...
776 Bytes - 09:28:53, 20 September 2024
Universal_semiconductor_inc_/TMF213CHP
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"500f","Absolute Max. Power Diss. (W)":"800m","Package":"TO-72","V(BR)DSS (V)":"10","g(fs) Min. (S) Trans. conduct.":"6m","I(D) Abs. Drain Current (A)":"30m","Military":"N","r(DS)on Max. (Ohms)":"220"}...
766 Bytes - 09:28:53, 20 September 2024